Description
MOSFET
Si
Through Hole
TO-92-3
Number of Channels: 1 Channel
Transistor Polarity: N-Channel
Drain-Source Breakdown Voltage: 60 V
Id – Continuous Drain Current: 200 mA
Rds On – Drain-Source Resistance: 1.2 Ohms
Vgs – Gate-Source Voltage: 20 V
Minimum Operating Temperature: – 55 C
Maximum Operating Temperature: + 150 C
Configuration: Single
Pd – Power Dissipation: 400 mW
Channel Mode: Enhancement
5.33 mm
Length: 5.2 mm
Product: MOSFET Small Signal
Series: 2N7000
Transistor Type: 1 N-Channel
Type: FET
Width: 4.19 mm
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