- Drain-Source Volt (Vds): 100V
- Drain-Gate Volt (Vdg): 100V
- Gate-Source Volt (Vgs): 20V
- Drain Current (Id): 10A
- Power Dissipation (Ptot): 70W
- Type: N-Channel
The IRF520 is a N-channel Power MOSFET with extremely low on-resistance per silicon area and fast switching performance. This benefit, combined with the fast switching speed and ruggedized device design that Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.